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Focused-Ion-Beam Induced Paramagnetic Defects in FAMn:PbI3 Perovskite Films

¹ Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon, Korea
² Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon, Korea
³ Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, Korea
⁴ Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, Korea
⁵ Western Seoul Center, Korea Basic Science Institute, Seoul, Korea
⁶ Western Seoul Center, Korea Basic Science Institute, Seoul, Korea
⁷ Physics Department, Division of Liberal Arts & Sciences, Hanil University & PTS, Wanju, Korea

Advances in Chemical Engineering and Science·Volume 12 (2022)·Pages 87–95·Published 23 March 2022·DOI10.4236/aces.2022.122007

Abstract

FAMn:PbI 3 perovskite films were synthesized and probed mainly through electron spin resonance (ESR) spectroscopy. FAMn:PbI 3 with low (~1%) Mn concentration showed a hyperfine sextet line originated from Mn ++ ions. FAMn:PbI 3 with high (10%) Mn concentration showed broad resonance (~500 G peak-to-peak linewidth). However, after bombardment of FAMn:PbI 3 with high Mn concentration by focused ion beams (FIB), a sharp ESR peak appeared. The peak-to-peak linewidth (Δ H pp ) was ~8 G regardless of the temperature . The FIB-induced defect showed Curie behavior at low temperatures (5 K - 50 K), which indicates the presence of localized electrons at the defect sites at low temperatures. The g-value increased from g = 2.0002 to 2.0016 as the temperature increased from 5 K to 50 K. Together with the ongoing search for electron spin echo (ESE), this could potentially provide a platform for realizing magnetic bits, information storage, and increased manipulation speed.

KeywordsPerovskite ManganitesFIBParamagnetic Spins

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Focused-Ion-Beam Induced Paramagnetic Defects in FAMn:PbI3 Perovskite Films

Abstract

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