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Pruned Volterra Models with Memory Effects for Nonlinear Power Amplifiers
Shanghai Institute of Microsystem and Information Technology, Shanghai, China
Shanghai Institute of Microsystem and Information Technology, Shanghai, China
Shanghai Institute of Microsystem and Information Technology, Shanghai, China
Nanjing University of Aeronautics and Astronautics, Nanjing, China
Nanjing University of Aeronautics and Astronautics, Nanjing, China
- 1 Shanghai Institute of Microsystem and Information Technology, Shanghai, China
- 2 Shanghai Institute of Microsystem and Information Technology, Shanghai, China
- 3 Shanghai Institute of Microsystem and Information Technology, Shanghai, China
- 4 Nanjing University of Aeronautics and Astronautics, Nanjing, China
- 5 Nanjing University of Aeronautics and Astronautics, Nanjing, China
Communications and Network·Volume 05 (2013)·Pages 570–572·Published 27 September 2013·DOI10.4236/cn.2013.53B2102
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Abstract
In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of memory length. The parameters of this model can be extracted in digital domain since the model is analyzed based on the envelope signals. The model we proposed enables a substantial reduction in the number of coefficients involved, and with excellent accuracy.
KeywordsVolterra SeriesPower Amplifier (PA)Behavioral ModelMemory Effect
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