Research ArticleOpen AccessGoogle Scholar indexed
A 30GHz Wideband CMOS Injection-Locked Frequency Divider for 60GHz Transceiver
Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai, China
Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai, China
Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai, China
- 1 Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai, China
- 2 Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai, China
- 3 Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai, China
Communications and Network·Volume 05 (2013)·Pages 6–10·Published 27 September 2013·DOI10.4236/cn.2013.53B2002
Copy link · social · email
Abstract
In this paper, a 30 GHz wide locking-range (26.2 GHz-35.7 GHz) direct injection-locked frequency divider (ILFD), which operating in the millimeter-wave (MMW) band, is presented. The locking range of the ILFD is extended by using differential injection topology. Besides, varactors are used in RLC resonant tank for extending the frequency tuning range. The post simulation results show that a wide locking-range of 9.5 GHz (30.7%) is achieved. When the VCO output frequency varies from 26.85 GHz to 34.42 GHz, the proposed ILFD can achieve divide-by-two correctly. Designed in 0.13 μm CMOS technology, the ILFD occupies a core area of 0.76 mm 2 while drawing 7 mA of current from 2.5 V power supply.
KeywordsCMOSInjection-locked Frequency Divider (ILFD)Locking RangeVCOWideband
- C. Lee and S. I. Liu, “A 58-to-60.4 GHz Frequency Synthesizer in 90 nm CMOS,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2007, pp. 196-197.
- J. Lee and B. Razavi, “A 40-GHz Frequency Divider in 0.18-μ m CMOS Technology,” IEEE J. Solid-State Circuits, Vol. 39, No. 4, pp. 594-601, Apr. 2004. doi:10.1109/JSSC.2004.825119
- P. Mayr, C. Weyers and U. Langmann, “A 90 GHz 65 nm CMOS Injection-locked Frequency Divider,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2007, pp. 198-199.
- K. H. Tsai, L. C. Cho, J. H. Wu and S. I. Liu, “3.5 mW W-band Frequency Divider with Wide Locking Lange in 90 nm CMOS Technology,” IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2008, pp. 466-467.
- L. C. Cho, K. H. Tsai, C. C. Hung and S. I. Liu, “93.5-109.4 GHz CMOS Injection-locked Frequency Divider with 15.3% Locking Range,” Symp. VLSI Circuits Dig. Tech. Papers, 2008, pp. 266-267.
- B. Y. Lin, K. H. Tsai and S. I. Liu, “A 128.24- to- 137.00 GHz Injection Locked Frequency Divider In 65 nm CMOS,” IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2009, pp. 282-283.
- B. Y. Lin and S. I. Liu, “A 132.7-to-143.5 GHz Injection-locked Frequency Divider in 65 nm CMOS,” Symp. VLSI Circuits Dig. Tech. Papers, 2009, pp. 230-231.
- B. Y. Lin and S. I. Liu, “Analysis and Design of D-band Injection-locked Frequency Dividers,” IEEE J. Solid-State Circuits, Vol. 46, No. 6, pp. 1250-1264, June 2011. doi:10.1109/JSSC.2011.2131750
- C. Y. Wu and C. Y. Yu, “Design and Analysis of Millimeter-wave Direct Injection-locked Frequency Divider with Large Frequency Locking Range,” IEEE Transactions on Microwave Theory and Techniques, Vol. 55, No. 8, 2007, pp. 1649-1658. doi:10.1109/TMTT.2007.902067
- S. J. Rong, W. L. Alan and H. C. Luong, “0.9 mW 7 GHz and 1.6 mW 60 GHz Frequency Dividers with Locking-range Enhancement in 0.13 μm CMOS,” IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2009, pp. 96-97.