Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs
- 1 Department of Electronics and Communication Engineering, Aditya Engineering College (Autonomous), Andhra Pradesh, India
- 2 Department of ECE, Motilal Nehru National Institute of Technology, Allahabad, India
Abstract
DG-MOSFETs are the most widely explored device architectures for na no-scale CMOS circuit design in sub-50 nm due to the improved subthre shold slope and the reduced leakage power compared to bulk MOSFETs. In thin-film ( t si < 10 nm) DG-MOS structures, charge carriers are affected by t si - induced quantum confinement along with the confinement caused by a very high electric field at the interface. Therefore, quantum confinement effects on the device characteristics are also quite important and it needs to be incorpo rated along with short channel effects for nano-scale circuit design. In this paper , we analyze d a DG-MOSFET structure at the 20 nm technology node incorporating quantum confinement effects and various short channel effects. The effect of physical parameter variations on performance characteristics of the device such as threshold voltage, subthreshold slope, I ON - I OFF ratio, DIBL , etc. has been investigated and plotted through extensive TCAD simulations. The physical parameters considered in this paper are operating temperature ( T op ), channel doping concentration ( N c ), gate oxide thickness ( t ox ) an d Silicon film thickness ( t si ). It was observed that quantum confinement of charge carriers significantly affect ed the performance characteristics (mostly the subth reshold characteristics) of the device and therefore, it cannot be ignored in the subthreshold region - based circuit design like in many previous research works. The ATLAS TM device simulator has been used in this paper to perform simu lation and parameter extraction. The TCAD analysis presented in the manuscript can be incorporated for device modeling and device matching. It can be used to illustrate exact device behavior and for proper device control.
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