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A Novel Responsivity Model for Stripe-Shaped Ultraviolet Photodiode
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China
Electrical and Computer Engineering Department, Boise State University, Boise, USA
- 1 Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China
- 2 Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China
- 3 Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, China
- 4 Electrical and Computer Engineering Department, Boise State University, Boise, USA
Circuits and Systems·Volume 03 (2012)·Pages 348–352·Published 30 October 2012·DOI10.4236/cs.2012.34049
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Abstract
A novel responsivity model, which is based on the solution of transport and continuity equation of carriers generated both in vertical and lateral PN junctions, is proposed for optical properties of stripe-shaped silicon ultraviolet (UV) photodiodes. With this model, the responsivity of the UV photodiode can be estimated. Fabricated in a standard 0.5 μm CMOS process, the measured spectral responsivity of the stripe-shaped UV photodiode shows a good match with the numerical simulation result of the responsivity model at the spectral of UV range. It means that the responsivity model, which is used for stripe-shaped UV photodiode, is reliable.
KeywordsResponsivityModelLateral PN JunctionStripe-ShapedSiliconUltraviolet (UV) PhotodiodeCMOS
- E. Charbon, “Towards Large Scale CMOS Single-Photon Detector Arrays for Lab-on-Chip Applications,” Journal of Physics D: Applied Physics, Vol. 41, No. 9, 2008, Article ID: 094010. doi:10.1088/0022-3727/41/9/094010
- Z. Djuric, K. Radulovic, N. Trbojevic and Z. Lazic, “Silicon Resonant Cavity Enhanced UV Flame Detector,” International Conference on Microelectronics, Vol. 1, 2002, pp. 239-242.
- M. P. Ulmer, “A Review of UV Detectors for Astrophysics: Past, Present, and Future,” Proceedings of SPIE, Vol. 7222, 2009, Article ID: 722210. doi:10.1117/12.810039
- G. K. Li, P. Feng and N. J. Wu, “A Novel Monolithic Ultraviolet Image Sensor Based on a Standard CMOS Process,” Journal of Semiconductors, Vol. 32, No. 10, 2011, Article ID: 105008.
- A. Ghazi, H. Zimmermann and P. Seegebrecht, “CMOS Photodiode with Enhanced Responsivity for the UV/Blue Spectral Range,” IEEE Transactions on Electron Devices, Vol. 49, No. 7, 2002, pp. 1124-1128. doi:10.1109/TED.2002.1013266
- B. A. Saleh, M. M. Hayat and M. C. Teich, “Effect of Dead Space on the Excess Noise Factor and Time Response of Avalanche Photodiodes,” IEEE Transactions on Electron Devices, Vol. 37, No. 9, 1990, pp. 1976-1984. doi:10.1109/16.57159
- M. M. Hayat, W. L. Sargeant and B. E. A. Saleh, “Effect of Dead Space on Gain and Noise in Si and GaAs Avalanche Photodiodes,” IEEE Journal of Quantum Electronics, Vol. 28, No. 5, 1992. pp. 1360-1365. doi:10.1109/3.135278
- M. M. Hayat, B. E. A. Saleh and M. C. Teich, “Effect of Dead Space on Gain and Noise of Double-Carrier-Multiplication Avalanche Photodiodes,” IEEE Transactions on Electron Devices, Vol. 39, No. 3, 1992, pp. 546-552. doi:10.1109/16.123476
- A. Pauchard, P.-A. Besse and R. S. Popovic, “A Silicon Blue/UV Selective Stripe-Shaped Photodiode,” Sensors and Actuators A: Physical, Vol. 76, No. 1-3, 1999, pp. 172-177. doi:10.1016/S0924-4247(99)00006-0
- A. Pauchard, P.-A. Besse and R. S. Popovic, “Dead Space Effect on the Wavelength Dependence of Gain and Noise in Avalanche Photodiodes,” IEEE Transactions on Electron Devices, Vol. 47, No. 9, 2000, pp. 1685-1693. doi:10.1109/16.861578
- A. Alexandre, F. Dadouche and P. Garda, “Two Dimensional Model for Lateral Photodiode,” International Conference on Design and Test of Integrated Systems in Nanoscale, Tunis, 5-7 September 2006, pp. 294-298.
- I. R. Rawlings, “Optical Absorption in Silicon Monoxide,” Journal of Physics D: Applied Physics, Vol. 1, No. 6, 1733, p. 733.