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Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips
Department of Electric, Electronics and Informatics, Kansai University, Suita, Japan
Department of Electric, Electronics and Informatics, Kansai University, Suita, Japan
- 1 Department of Electric, Electronics and Informatics, Kansai University, Suita, Japan
- 2 Department of Electric, Electronics and Informatics, Kansai University, Suita, Japan
Circuits and Systems·Volume 04 (2013)·Pages 173–180·Published 17 April 2013·DOI10.4236/cs.2013.42024
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Abstract
The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d . c . condition and a . c . condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a . c . analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.
KeywordsRF-IDSchenkel CircuitSOI-MOSFETQuasi-DiodeLow-Power
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