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Mixed-Mode Device Modeling of DGMOS RF Oscillators
Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria
Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria
Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria
Institute of Nanotechnology of Lyon (INL), University of Lyon, Lyon, France
- 1 Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria
- 2 Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria
- 3 Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria
- 4 Institute of Nanotechnology of Lyon (INL), University of Lyon, Lyon, France
Circuits and Systems·Volume 05 (2014)·Pages 18–26·Published 10 January 2014·DOI10.4236/cs.2014.51004
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Abstract
A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.
KeywordsDGMOS TransistorColpitts OscillatorRadiofrequencyMixed Mode SimulationISF FunctionNoise
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