Experimental Demonstration of <i>g<sub>m</sub></i>/I<i><sub>D</sub></i> Based Noise Analysis
- 1 Department of Engineering Science, Sonoma State University, Rohert Park, USA
- 2 IEMN, UMR CNRS 8520 Department of DHS, University of Lille, Lille, France
- 3 IBM Microelectronics Essex Junction, New York, USA
Abstract
Recent studies using BSIM3 models have suggested that noise depends on the transconductance-to-drain ratio g m / I D of a transistor. However, to the best of our knowledge, no experimental result demonstrating g m / I D dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using g m / I D based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as g m / I D is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately.
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