A low temperature sol-gel process was used to fabricate zinc-oxide and yttrium-doped zinc oxide layers. These zinc-oxide and yttrium-doped ZnO films were used as electron transport layers in conjunction with P 3 HT and PC 16 BM type solar cells. It was demonstrated that annealing and doping of electron transport layer influenced the overall organic solar cells performance. Anneals of ~ 150?C provided the highest device performance. Compared to the undoped zinc oxide, the device with yttrium doped zinc oxide layers showed improved efficiency by about 30%. Furthermore an equivalent circuit was proposed to understand the connection between the electrical and optical characteristics of the device. Comparisons between the simulated and experimental current-voltage(I-V) curves displayed only a 1.2% variation between the curves. Clearly, our experimental and simulated studies provide new insight on the equivalent circuit models for inverted organic solar cells and further improvement on photovoltaic efficiency.
KeywordsInverted Organic Solar CellEquivalent CircuitFill-FactorP3HT/PCBMETLYttrium-Doped ZnO
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