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Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application
Central Tehran Branch, Islamic Azad University, Tehran, Iran
Central Tehran Branch, Islamic Azad University, Tehran, Iran
- 1 Central Tehran Branch, Islamic Azad University, Tehran, Iran
- 2 Central Tehran Branch, Islamic Azad University, Tehran, Iran
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Abstract
Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.
KeywordsCarbon Nanotube Field-Effect Transistor (CNTFET)Transition FrequencyUltra-Wide Band (UWB)FETToy
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