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A.C. Recombination Velocity as Applied to Determine n<sup>+</sup>/p/p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness

¹ Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
² Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
³ University Institute of Technology, University of Thiès, Thiès, Senegal
⁴ Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
⁵ Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
⁶ Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
⁷ Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
⁸ Ecole Supérieure Polytechnique de Nouakchott, Département Génie Electrique, Nouackchott, Mauritanie
⁹ Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

Energy and Power Engineering·Volume 12 (2020)·Pages 543–554·Published 16 October 2020·DOI10.4236/epe.2020.1210033

Abstract

This work deals with determining the optimum thickness of the base of an n + /p/p + silicon solar cell under monochromatic illumination in frequency modulation. The continuity equation for the density of minority carriers generated in the base, by a monochromatic wavelength illumination ( λ ), with boundary conditions that impose recombination velocities ( Sf ) and ( Sb ) respectively at the junction and back surface, is resolved. The ac photocurrent is deduced and studied according to the recombination velocity at the junction, to extract the mathematical expressions of recombination velocity ( Sb ). By the graphic technique of comparing the two expressions obtained, depending on the thickness ( H ) of the base, for each frequency, the optimum thickness (Hopt) is obtained. It is then modeled according to the frequency, at the long wavelengths of the incident light. Thus, Hopt decreases due to the low relaxation time of minority carriers, when the frequency of modulation of incident light increases.

KeywordsSilicon Solar CellModulation FrequencyRecombination VelocityBase ThicknessWavelength

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A.C. Recombination Velocity as Applied to Determine n<sup>+</sup>/p/p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness

Abstract

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