Optimizing Thin-Film Solar Cell Performance: A Comparative Numerical Analysis of GaAsN, GaInAsN and GaInAsNSb-Based Structures Using SCAPS-1D — Oak Academic Publishing
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Optimizing Thin-Film Solar Cell Performance: A Comparative Numerical Analysis of GaAsN, GaInAsN and GaInAsNSb-Based Structures Using SCAPS-1D
Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
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Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
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Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
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Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
1 Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
2 Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
3 Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
4 Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh
This research examines the performances of thin-film solar cells utilizing three dilute nitrides based novel absorber layer’s materials GaAsN, GaInAsN, and GaInAsNSb, modeled through SCAPS-1D. Comparative analyses evaluated the effects of absorber layer composition, doping densities, thickness variations, and operating temperature on critical photovoltaic parameters, including short-circuit current density (J sc ), open-circuit voltage (V oc ), fill factor (FF), efficiency ( η ), and quantum efficiency (QE). In this study, GaInAsN-based solar cell (Cell 2) demonstrated the highest efficiency (34.7%) and short-circuit current density (46.8 mA/cm 2 ), while GaAsN (Cell 1) shown reduced performance with J sc and efficiency reaching maxima of 33.8 mA/cm 2 and 30.6%, respectively. These two cell’s efficiency is better than that of GaAs-based solar cell reported previously. Thus, it is concluded that dilute nitrides based structure is better for photovoltaic application and further addition of indium atoms (In) into dilute nitrides played a vital role on the crystallographic, electrical and optical properties in GaInAsN for producing better performance. The third cell (Cell 3) based on GaInAsNSb exhibited a peak efficiency of 31.6%; however, it did not achieve the same levels of J sc and efficiency as Cell 2 but Cell 1. It seems that the combined effect of In and Sb atoms in GaInAsNSb mitigates the efficiency. Simulations on the proposed structures revealed that Cell 2 maintained superior performance across a range of absorber thicknesses, doping concentrations, and temperatures, showcasing its robustness and adaptability. Cell 3 exhibited better stability compared to Cell 1, especially under diverse environmental conditions. Furthermore, Cell 2 demonstrated larger quantum efficiency in the visible and near-infrared wavelengths, indicating its suitability for high-efficiency photovoltaic applications. This research’s findings obtained by simulation would be highly advantageous for further experimental verification in order to advance photonics-based nanotechnology and renewable energy, which would help to reduce greenhouse gas emissions and the world’s energy crises simultaneously and sustainably.
KeywordsThin-Flim Solar CellGaAsGaAsNGaInAsNGaInAsNSbEfficiency
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Dilute Nitrides
Quantum Efficiency
Comparative Analysis
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