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Dopant Implantation into the Silicon Substrate with Non-Planar Surface
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Energy and Power Engineering·Volume 02 (2010)·Pages 73–77·Published 28 May 2010·DOI10.4236/epe.2010.22011
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Abstract
The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.
KeywordsComputer ModelingSilicon DopingImplantationDonorAcceptor Dopants
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