Research ArticleOpen AccessGoogle Scholar indexed
Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET
1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China
1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China
Nanjing Electronic Devices Institute, Nanjing, China
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China
- 1 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China
- 2 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China
- 3 Nanjing Electronic Devices Institute, Nanjing, China
- 4 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China
Energy and Power Engineering·Volume 05 (2013)·Pages 1284–1287·Published 30 June 2013·DOI10.4236/epe.2013.54B243
Copy link · social · email
Abstract
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm 2 ) with a current gain of I D /I G = 19746 at gate bias V G = 3 V and drain bias V D = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm 2 . The BV gain is 250 V with V g from -10 V to -4 V and is 350 V with V g from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm 2 .
Keywords4H-SiCVJFETOhmicTrenchImplant
- M. S. Mazzola, L. Cheng, J. R. B. Casady, D. Seale, V. Bondarenko, R. Kelley and J. B. Casady, presented in The 6th International All Electric Combat Vehicle (AECV) Conference 2005, Bath, England, June 15, 2005,
- K. Rueschenschmidt, T. M. reu, R. Rupp, et al., “SiC JFET: Currently the Best Solution for a Unipolar SiC High Power Switch,” Material Science Forum, Vol. 600-603, 2009, pp. 901-906. doi:10.4028/www.scientific.net/MSF.600-603.901
- W. J. Ni, Y. Z. Li, Z. Y. Li, et al., “1200 V Normally-on 4H-SiC VJFET,” Research & Progress of Sse, Vol. 31, No. 2, 2011, pp. 103-106.
- G. Chen, X. F. Song, S. Bai, et al., “5A 1300V Trenched and Implanted 4H-SiC Vertical JFET,” Applied Mechanics and Materials, Vol. 229-231, 2012, pp. 824-827.doi:10.4028/www.scientific.net/AMM.229-231.824
- V. Veliadis, M. Snook, T. McNutt, H. Hearne, P. Potyraj, A. Lelis and C. Scozzie, “A 2055-V (at 0.7 mA/cm2) 24-A (at 706 W/cm2) Normally On 4H-SiC JFET With 6.8-mm2 Active Area and locking-Voltage Capability Reaching the Material Limit,” IEEE Electronics Device Letters, Vol. 29, No. 12, 2008, pp. 1325-1327.
- C. S. David and R. Andrew, “Semiconductor Devices with Non-punch-through Semiconductor Channels Having Enhanced Conduction and Methods of Making,” Patent No. US7994548 B2.