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Illumination Level Effects on Macroscopic Parameters of a Bifacial Solar Cell
Ecole Nationale Supérieure Polytechnique (ENSP), Université Marien Ngouabi, Brazzaville, Congo
Ecole Nationale Supérieure Polytechnique (ENSP), Université Marien Ngouabi, Brazzaville, Congo
Faculté des Sciences et Technologies (FST), Université Cheikh Anta Diop, Dakar, Sénégal
- 1 Ecole Nationale Supérieure Polytechnique (ENSP), Université Marien Ngouabi, Brazzaville, Congo
- 2 Ecole Nationale Supérieure Polytechnique (ENSP), Université Marien Ngouabi, Brazzaville, Congo
- 3 Faculté des Sciences et Technologies (FST), Université Cheikh Anta Diop, Dakar, Sénégal
Energy and Power Engineering·Volume 06 (2014)·Pages 25–36·Published 24 March 2014·DOI10.4236/epe.2014.63004
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Abstract
This study presents a method based on the experimental measurement of the short-circuit current ( I cc ) and the open circuit voltage ( V co ) of the solar cell. It permits the determination of recombination parameters such as: diffusion length ( L ), back surface recombination velocity ( Sb ), intrinsic junction recombination velocity ( S jo ), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.
KeywordsSolar CellPhoto VoltageRecombination VelocityDiffusion LengthSeries ResistanceShunt Resistance
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