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Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell
Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal
- 1 Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal
Energy and Power Engineering·Volume 07 (2015)·Pages 203–208·Published 5 May 2015·DOI10.4236/epe.2015.75020
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Abstract
The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy ( Eg ).
KeywordsVertical JunctionEnergy GapPhotocurrent DensityPhotovoltage
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