Physicochemical Characterization of Photoelectrodes of Ti/TiO<sub>2</sub> Prepared by Thermal Oxidation of Titanium
- 1 Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA), Departamen to de Química, Facultad de Ciencias Exactas, UNLP, CCT La Plata-CONICET, La Plata, Argentina
- 2 Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA), Departamen to de Química, Facultad de Ciencias Exactas, UNLP, CCT La Plata-CONICET, La Plata, Argentina
Abstract
The preparation and study of supported TiO 2 for photocatalytic application in solar cell devices is a relevant research field. Thin films of TiO 2 prepared on Ti by thermal oxidation in a wide range of temperatures (450 ° C - 900 ° C) were characterized by electrochemical impedance spectroscopy, potentiometry and amperometry. This material presents photoelectrochemical activity, which depends dramatically of the oxidation temperature and the exposition time at the studied temperatures. The flatband potential as well as the donor density and the resistance to the charge transfer were measured. All these parameters are temperature dependent, and the optimal values are observed on the photoelectrodes prepared at 750 ° C. This result is consistent with the photochemical response reported in the literature for thin films of Ti/TiO 2 prepared under similar conditions.
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