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Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell
Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal
- 1 Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal
- 2 Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal
Energy and Power Engineering·Volume 08 (2016)·Pages 130–136·Published 15 March 2016·DOI10.4236/epe.2016.83011
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Abstract
This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt ( R sh ) and series ( R s ) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.
KeywordsSeries ResistanceShunt ResistancePowerVertical Junction
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