Minority Carrier Diffusion Coefficient <i>D</i>*(<i>B,T</i>): Study in Temperature on a Silicon Solar Cell under Magnetic Field — Oak Academic Publishing
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Minority Carrier Diffusion Coefficient <i>D</i>*(<i>B,T</i>): Study in Temperature on a Silicon Solar Cell under Magnetic Field
Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
,
Ecole Polytechnique de Thiès, Thiès, Sénégal
,
Ecole Polytechnique de Thiès, Thiès, Sénégal
,
Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
,
Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
,
Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
,
Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
,
Ecole Polytechnique de Thiès, Thiès, Sénégal
,
Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
1 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
2 Ecole Polytechnique de Thiès, Thiès, Sénégal
3 Ecole Polytechnique de Thiès, Thiès, Sénégal
4 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
5 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
6 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
7 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
8 Ecole Polytechnique de Thiès, Thiès, Sénégal
9 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.
KeywordsSolar cellDiffusion CoefficientTemperatureMagnetic Field
Sontag, D., Hahn, G., Geiger, P., Fath, P. and Bucher, E. (2002) Two-Dimensional Resolution of Minority Carrier Diffusion Constant in Different Silicon Materials.. Solar Energy Materials & Solar Cells, 72, 533-539.
Dieng, A., Zerbo, I., Wade, M., Maiga, A.S. and Sissoko, G. (2011) Three-Dimen- sional Study of a Polycrystalline Silicon Solar Cell: The Influence of the Applied Magnetic Field on the Electrical Parameters. Semiconductors Sciences and Technologies, 26, Article ID: 095023.
Bester, Y., Ritter, D., Bahia, G., Cohen, S. and Sparkling, J. (1995) Method Measurement of the Minority Carrier Mobility in the Base of Heterojunction Bipolar Transistor Using a Magnetotransport Method. Applied Physics Letters, 67, 1883- 1884. https://doi.org/10.1063/1.114364
Faye, K., Gaye, I., Gueye, S., Wade, M. and Sissoko, G. (2014) Silicon Solar Cell under Back Side Illumination: Effect of Magnetic Field. IPASJ-International Journal of Electrical Engineering (IIJEE), 2, 1-9.
Faye, K., Gaye, I., Gueye, S., Tamba, S. and Sissoko, G. (2014) Effect of Doping Level of a Silicon Solar Cell under Back Side illumination. Current Trends in Technology & Sciences (CTTS), 3, 365-371.
Liou, J.J. and Wong, W.W. (1992) Comparison and Optimization of the Performance of Si and GaAs Solar Cells. Solar Energy Materials and Solar Cells, 28, 9-28. https://doi.org/10.1016/0927-0248(92)90104-W
Ndiaye, E.H., Sahin, G., Dieng, M., Thiam, A., Diallo, H.L., Ndiaye, M. and Sissoko, G. (2015) Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation. Journal of Applied Mathematics and Physics, 3, 1522-1535. https://doi.org/10.4236/jamp.2015.311177
Bousse, L., Mostarshed, S., Sartore, M., Adami, M. and Nicolini, C. (1994) Investigation of Carrier Transport through Silicon Wafers by Photocurrent measurement. Journal of Applied Physics, 75, 4000-4008. https://doi.org/10.1063/1.356022
Tall, I., Seibou, B., El Moujtaba, M.A.O., Diao, A., Wade, M. and Sisoko, G. (2015) Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit. International Journal of Engineering Trends and Technology (IJETT), 19, No. 2. https://doi.org/10.14445/22315381/IJETT-V19P211
Deme, M.M., Mbodj, S., Ndoye, S., Thiam, A., Dieng, A. and Sissoko, G. (2010) Influence of Illumination Angle Grain Boundary Recombination Size and Grain Velocity on the Facial Solar Cell Diffusion Capacitance. Review of Renewable Energy, 13, 109-121.
Diatta, I., Diagne, I., Sarr, C., Faye, K., Ndiaye, M. and Sissoko, G. (2015) Silicon Solar Cell Capacitance: Influence of Both Temperature and Wavelength. Interna- tional Journal of Computer Science, 3, 1-8.
Diatta, I., Ly, I., Wade, M., Diouf, M.S., Mbodji, S. and Sissoko, G. (2016) Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light. World Journal of Condensed Matter Physics, 6, 261-268.
Erel, S. (2002) The Effect of Electric and Magnetic Fields on the Operation of a Photovoltaic Cell. Solar Energy Materials & Solar Cells, 71, 273-280. https://doi.org/10.1016/S0927-0248(01)00088-5
Moissi, A., Zoungrana, M., Diallo, A., Mbodji, S., Diallo, H.L., Hamidou, A., Ndiaye, M. and Sissoko, G. (2014) Base Transceiver Station (BTS) Antenna Electric Field Influence on the Space Charge Region in a Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 7, 2554-2558.
Diouf, M.S., Gaye, I., Thiam, A., Fall, M.F.M., Ly, I. and Sissoko, G. (2014) Junction Recombination Velocity Induced Open Circuit Voltage for a Silicon Solar Cell under External Electric Field. Current Trends in Technology & Sciences, 3, 372-375. http://www.ctts.in/
Fuyuki, T. and Matsunami, H. (1981) Determination of Lifetime and Diffusion Constant of Minority Carriers by a Phase-Shift Technique Using an Electron- Beam-Induced Current. Journal of Applied Physics, 52, 3428-3432. https://doi.org/10.1063/1.329116
Lemine, M., Cheikh, O., Seibou, B., Abderrahim, M., Moujtaba, O.E., Faye, K., Wade, M. and Sissoko, G. (2015) Study of Base Doping Rate Effect on Parallel Vertical Junction Silicon Solar Cell under Magnetic Field. International Journal of Engineering Trends and Technology, 19, 44-55. http://www.ijettjournal.org
Mbaye, M.F., Zoungrana, M., Thiam, N., Diao, A., Sahin, G., Ndiaye, M., Dieng, M. and Sissoko, G. (2013) Study of the Photo Thermal Response of a Mono Facial Solar Cell in Dynamic Regime under a Multispectral Illumination and under Magnetic Field. International Journal of Engineering and Science Inventive, 1, 60-66.
Diao, A., Thiam, N., Zoungrana, M., Sahin, G., Ndiaye, M. and Sissoko, G. (2014) Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits. World Journal of Condensed Matter Physics, 4, 84-92. https://doi.org/10.4236/wjcmp.2014.42013
Rosling, M., Bleichner, H., Lundqvist, M. and Nordlander, E. (1989) A Novel Technique for the Simultaneous Measurement of Ambipolar Carrier Lifetime and Diffusion Coefficient in Silicon. Solid-State Electronics, 35, 1223-1227.
Misiakos, K. (1994) Electron and Hole Mobilities in Lightly Doped Silicon. Applied Physics Letters, 64, 2007-2009.
Diallo, M.M., Seibou, B., Ba, H.Y., Zerbo, I. and Sissoko, G. (2014) One-Dimen- sional Study of a Bifacial Silicon Solar Cell Illuminated from the Front Surface by a Monochromatic Light under Frequency Modulation: Influence of Irradiation and Damage Coefficient. Current Trends in Technology and Sciences, 3, 416-421.
Rose, B.H. and Weaver, H.T. (1983) Determination of Effective Surface Recombination Velocity and Minority-Carrier Lifetime in High-Efficiency Si Solar Cells. Journal of Applied Physics, 54, 238-247. https://doi.org/10.1063/1.331693
Joardar, K., Dondero, R.C. and Schroda, D.K. (1989) Critical Analysis of the Small- Signal Voltage-Decay Technique for Minority-Carrier Lifetime Measurement in Solar Cells. Solid-State Electronics, 32, 479-483.
Sproul, A.B. (1994) Dimensionless Solution of the Equation Describing the Effect of Surface Recombination on Carrier Decay in Semiconductors. Journal of Applied Physics, 76, 2851-2854.
Barro, F.I., Maiga, A.S., Wereme, A. and Sissoko, G. (2010) Determination of Recombination Parameters in the Base of a Bifacial Silicon Solar Cell under Constant Multispectral Light. Physical and Chemical News, 56, 76-84.
Jain, S.C. (1983) The Effective Lifetime in Semicrystalline Silicon. Solar Cells, 9, 345-352. https://doi.org/10.1016/0379-6787(83)90028-5
Sissoko, G., Museruka, C., Correa, A., Gaye, I. and Ndiaye, A.L. (1996) Spectral Light Effect on Recombination Parameters of Silicon Solar Cell. Proceedings of World Renewable Energy Congress, Part 3, Denver, 15-21 June 1996, 1487-1490.
Dione, M.M., Diao, A., Ndiaye, M., Diallo, H.L., Thiam, N., Barro, F.I., Wade, M., Maiga, A.S. and Sissoko, G. (2010) 3D Study of a Mono Facial Silicon Solar Cell under Constant Mono Crhomatic Light: Influence of Grain Size, Grain Boundary Recombination Velocity, Illumination Wavelength, Back Surface and Junction Recombination Velocities. Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 6-10 September 2010, 488-491.
Dugas, J. (1994) 3D Modelling of a Reverse Cell Made with Improved Multicrystalline Silicon Wafers. Solar Energy Materials and Solar Cells, 32, 71-88.
Dieye, M., Mbodji, S., Zoungrana, M., Zerbo, I., Dieng, B. and Sissokoa, G. (2015) 3D Modelling of Solar Cell’s Electric Power under Real Operating Point. World Journal of Condensed Matter Physics, 5, 275-288.
Mbodji, S., Ly, I., Diallo, H.L., Dione, M.M., Diasse, O. and Sissoko, G. (2012) Modeling Study of N+/P Solar Cell Resistances from Single I-V Characteristic Curve Considering the Junction Recombination Velocity (Sf). Research Journal of Applied Sciences, Engineering and Technology, 4, 1-7.
Mbodji, S., Dieng, M., Mbow, B., Barro, F.I. and Sissoko, G. (2010) Three Dimensional Simulated Modelling of Diffusion Capacitance of Polycrystalline Bifacial Silicon Solar Cell. Journal of Applied Sciences and Technology, 15, 109-114.
Mbodji, S., Mbow, B., Barro, F.I. and Sissoko, G. (2010) A 3D Model for Thickness and Diffusion Capacitance of Emitter-Base Junction in a Bifacial Polycrystalline Solar Cell. Global Journal of Pure and Applied Sciences, 16, 469-477.
Mbodji, S., Mbow, B., Dieng, F., Barro, F.I. and Sissoko, G. (2010) 3D Modelling of Polycrystalline Silicon Bifacial Solar Cell Determination of Thickness and Diffusion Capacitance of Emitter Base Junction. General Physics and Electrical Application, 83, 47-62. http://www.amse-modeling.com
Saritas, M. and Mckell, H.D. (1988) Comparison of Minority-Carrier Diffusion Length Measurement in Silicon by the Photoconductive Decay and Surface Photo Voltage Methods. Journal of Applied Physics, 63, 4561-4567.
Agarwala, A. and Tewary, V.K. (1980) Response of a Silicon p-n Solar Cell to High Intensity Light. Journal of Physics D: Applied Physics, 13, 1885-1898. https://doi.org/10.1088/0022-3727/13/10/018
Stokes, E.D. and Chu, T.L. (1977) Diffusion Length in Solar Cells from Short- Circuit Current Measurement. Applied Physics Letters, 30, 425-426. https://doi.org/10.1063/1.89433
Dione, M.M., Ly Diallo, H., Wade, M., Ly, I., Thiame, M., Toure, F., Camara, A.G., Dieme, N., Bako, Z.N., Mbodji, S., Barro, F.I. and Sissoko, G. (2011) Determination of the Shunt and Series Resistance of a Vertical Multijunction Solar Cell under Constant Multispectral Light. Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, 5-9 September 2011, 250-254. http://www.eupvsec-proceedings.com
El Moujtaba, M.A., Ndiaye, O.M., Diao, A., Thiame, M., Barro, I.F. and Sissoko, G. (2012) Theoretical Study of the Influence of Irradiation on a Silicon Solar Cell under Multispectral Illumination. Research Journal of Applied Sciences, Engineering and Technology, 4, 5068-5073.
Ndiaye, M., Diao, A., Thiame, M., Dione, M.M., Diallo, H.L., Samb, M.L., Ly, I., Gassama, C., Mbodji, S., Barro, F.I. and Sissoko, G. (2010) 3D Approach for a Modelling Study of the Diffusion Capacitance’s Efficiency of the Solar Cell. Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 6-10 September 2010, 484-487.
Diallo, H.L., Wade, M., Ly, I., Diaye, M.N., Dieng, B., Lemrabott, O.H., Maïga, A.S. and Sissoko, G. (2012) 1D Modeling of a Bifacial Silicon Solar Cell under Frequency Modulation, Monochromatic Illumination: Determination of the Equivalent Electrical Circuit Related to the Surface Recombination Velocity Research. Journal of Applied Sciences, Engineering and Technology, 4, 1672-1676.
Sahin, G., Dieng, M., Moujtaba, M.A.O.E., Ngom M.I., Thiam, A. and Sissoko, G. (2015) Capacitance of Vertical Parallel Junction Silicon Solar Cell under Mono- chromatic Modulated Illumination. Journal of Applied Mathematics and Physics, 3, 1536-1543.
Sze, S.M. and Kwok, K.N. (2007) Physics of Semiconductors Devices. 3rd Edition, John Wiley and Sons, Hoboken.
Levy, F. (1995) Physique et technologie des semi-conducteurs (Traité des matériaux). Vol. 18, Presses polytechniques et universitaires Romandes, Lausanne.
Kunst, M. and Sanders, A. (1992) Transport of Excess Carriers in Silicon Wafers. Semiconductor Science and Technology, 7, 51-59.
Schroder, D.K., Whitfield, J.D. and Varker, C.J. (1984) Recombination Lifetime Using the Pulsed MOS Capacitor. IEEE Transactions on Electron Devices, 31, 462- 467. https://doi.org/10.1109/T-ED.1984.21551
Sari-Ali, I., Benyoucef, B. and Chikh-Bled, B. (2007) Etude de la jonction d’un semi-conducteur à l’équilibre thermodynamique. Journal of Electron Devices, 5, 122-126.
Vardanyan, R.R., Kerst, U., Wawer, P., Nell, M.E. and Wagemann, H.G. (1998) Method for Measurement of All Recombination Parameters in the Base Region of Solar Cells. 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, 191-193.
De Haas, W.J. and Biermasz, T.H. (1935) The Thermal Conductivity of Quartz at Low Temperatures. Physica, 2, 673-682.
Berman, R. (1951) Thermal Conductivity of Dielectric Crystals: The “Umklapp”. Nature, 168, 277-280.
Casimir, H.B.G. (1938) Note on the Conduction of Heat in Crystals. Physica, 5, 495-500.
Makinson, R.E.B. (1938) The Thermal Conductivity of Metals. Mathematical Proceedings of the Cambridge Philosophical Society, 34, 474-497. https://doi.org/10.1017/S0305004100020442