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An X-Band Low Noise Amplifier Design for Marine Navigation Radars
National and Kapodistian University of Athens, Athens, Greece
National and Kapodistian University of Athens, Athens, Greece;Hellenic Naval Academy, Pireaus, Greece
- 1 National and Kapodistian University of Athens, Athens, Greece
- 2 National and Kapodistian University of Athens, Athens, Greece;Hellenic Naval Academy, Pireaus, Greece
International Journal of Communications, Network and System Sciences·Volume 07 (2014)·Pages 75–82·Published 13 March 2014·DOI10.4236/ijcns.2014.73009
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Abstract
In this paper, the design of a 9.1 GHz Low Noise Amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA, we used GaAs Field-Effect Transistors (FETs) from Agilent ADS component library. In order to keep the cost of the circuit in low prices and the performance high, we design a two-stage LNA.
KeywordsNavy RADARLow Noise Amplifier (LNA)Field Effect Transistor (FET)
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