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Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications
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International Journal of Communications, Network and System Sciences·Volume 04 (2011)·Pages 662–666·Published 12 October 2011·DOI10.4236/ijcns.2011.410081
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Abstract
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.
KeywordsADSClass F Power AmplifierLD MOSWCDMA
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