Modeling of Complex Solitary Waveforms for Micro-Width Doped ZnO Waveguides
- 1 Amrita Vishwa Vidyapeetham, Kollam, India
- 2 Amrita Vishwa Vidyapeetham, Coimbatore, India
- 3 Govt.Polytechnic College, Kottayam, India
Abstract
The potential applications of metallic oxides as supporters of nonlinear phenomena are not novel. ZnO shows high nonlinearity in the range 600 - 1200 nm of the input wavelength [1]. ZnO thus make way to become efficient photoluminescent devices. In this paper, the above mentioned property of ZnO is harnessed as the primary material for the fabrication of waveguides. Invoking nonlinear phenomena can support intense nonlinear pulses which can be a boost to the field of communication. The modeling characteristics of undoped and doped ZnO also confirm the propagation of a solitary pulse [1]. An attempt to generalize the optical pattern of the doped case with varying waveguide widths is carried out in the current investigation. The variations below 6 um are seen to exhibit complex waveforms which resemble a continuum pulse. The input peak wavelength is kept constant at 600 nm for the modeling.
- R. E. Mohan, K. S. Sreelatha, M. Sivakumar and A. Krishnasree, “Modeling of Doped ZnO Waveguides for Nonlinear Applications,” Advanced Materials Research, Vol. 403-408, 2011, pp. 3753-3757. 10.4028/www.scientific.net/AMR.403-408.3753
- K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science, Vol. 300, No. 5623, 2003, pp. 1269-1272. doi:10.1126/science.1083212
- T. Nakada, Y. Hirabayashi, T. Tokado, D. Ohmori and T. Mise, “Novel Device Structure for Cu(In,Ga)Se2 Thin Film Solar Cells Using Transparent Conducting Oxide Back and Front Contacts,” Solar Energy, Vol. 77, No. 6, 2004, pp. 739-747.
- S. Y. Lee, E. S. Shim, H. S. Kang, S. S. Pang, et al., “Fabrication of ZnO Thin Film Diode Using Laser Annealing,” Thin Solid Films, Vol. 437, No. 1, 2005, pp. 31-34.
- R. Konenkamp, R. C. Word and C. Schlegel, “Vertical Nanowire Light-Emitting Diode,” Applied Physics Letters, Vol. 85, No. 24, 2004, pp. 6004-6006. doi:10.1063/1.1836873
- S. Trolier-McKinstry and P. Muralt, “Thin Film Piezo-electrics for MEMS,” Journal of Electroceramics, Vol. 12, No. 1-2, 2004, pp. 7-17. doi:10.1023/B:JECR.0000033998.72845.51
- Z. L. Wang, X. Y. Kong, Y. Ding, P. Gao, W. L. Hughes, R. Yang and Y. Zhang, “Semiconducting and Piezoelectric Oxide Nanostructures Induced by Polar Surfaces,” Advanced Functional Materials, Vol. 14, No. 10, 2004, pp. 943-956. doi:10.1002/adfm.200400180
- M. S. Wagh, L. A. Patil, T. Seth and D. P. Amalnerkar, “Surface Cupricated SnO 2 -ZnO Thick Films as a H2S Gas Sensor,” Materials Chemistry and Physics, Vol. 84, No. 2-3, 2004, pp. 228-233. doi:10.1016/S0254-0584(03)00232-3
- Y. Ushio, M. Miyayama and H. Yanagida, “Effects of Interface States on Gas-Sensing Properties of a CuO/ZnO Thin-Film Heterojunction,” Sensors and Actuators B: Chemical, Vol. 17, No. 3, 1994, pp. 221-226.
- H. Harima, “Raman Studies on Spintronics Materials Based on Wide Bandgap Semiconductors,” Journal of Physics: Condensed Matter, Vol. 16, No. 48, 2004, pp. S5653-S5660. doi:10.1088/0953-8984/16/48/023
- S. J. Pearton, W. H. Heo, M. Ivill, D. P. Norton and T. Steiner, “Dilute Magnetic Semiconducting Oxides,” Semi-conductor Science and Technology, Vol. 19, No. 10, 2004, pp. R59-R74. doi:10.1088/0268-1242/19/10/R01
- ü. Ozgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Do?an, V. Avrutin, S.-J. Cho and H. Morkoc, “A Comprehensive Review of ZnO Materials and Devices,” Journal of Applied Physics, Vol. 98, No. 4, 2005, pp. 041301-103