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Optical Methods in Orientation of High-Purity Germanium Crystal
Department of Physics, University of South Dakota, Vermillion, USA
Department of Physics, University of South Dakota, Vermillion, USA
Department of Physics, University of South Dakota, Vermillion, USA
Department of Physics, University of South Dakota, Vermillion, USA
Department of Physics, University of South Dakota, Vermillion, USA
Department of Physics, University of South Dakota, Vermillion, USA
Department of Chemistry, University of South Dakota, Vermillion, USA.
- 1 Department of Physics, University of South Dakota, Vermillion, USA
- 2 Department of Physics, University of South Dakota, Vermillion, USA
- 3 Department of Physics, University of South Dakota, Vermillion, USA
- 4 Department of Physics, University of South Dakota, Vermillion, USA
- 5 Department of Physics, University of South Dakota, Vermillion, USA
- 6 Department of Physics, University of South Dakota, Vermillion, USA
- 7 Department of Chemistry, University of South Dakota, Vermillion, USA.
Journal of Crystallization Process and Technology·Volume 03 (2013)·Pages 60–63·Published 30 April 2013·DOI10.4236/jcpt.2013.32009
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Abstract
Two optical methods, namely crystal facet reflection and etching pits reflection, were used to orient <100> and <111> high-purity germanium crystals. The X-ray diffraction patterns of three slices that were cut from the oriented <100> and <111> crystals were measured by X-ray diffraction. The experimental errors of crystal facet reflection method and etching pits reflection method are in the range of 0.05° - 0.12° . The crystal facet reflection method and etching pits reflection method are extremely simple and cheap and their accuracies are acceptable for characterizing high purity detector-grade germanium crystals.
KeywordsReflection MethodHigh-Purity Germanium Crystal
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