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Remote-Plasma-Assisted Deposition of Pentacene Layer Using Atomic-Hydrogen
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
- 1 Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
- 2 Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
- 3 Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan
Journal of Crystallization Process and Technology·Volume 04 (2014)·Pages 14–19·Published 2 January 2014·DOI10.4236/jcpt.2014.41002
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Abstract
Pentacene thin layers were deposited on Si with the native oxide at 80°C by remote-plasma-assisted deposition (RPAD) using hydrogen-plasma cell to supply atomic hydrogen radicals. The deposition rate was increased by RPAD comparing to that by non-excited hydrogen gas supply whereas thermal evaporation rate of pentacene from crucible was same in the both process. DFM and XRD studies showed the grain laterally grew in the thin film phase with the size above 10 μm by RPAD. First-principles molecular orbital calculations suggested penta cene is evaporated from crucible as the trimer or larger cluster but atomic hydrogen penetrated into the cluster enhances cracking of pentacene clusters to the monomer.
KeywordsRemote-Plasma-Assisted DepositionPentaceneHydrogen PlasmaAtomic Hydrogen
- A. R. Brown, A. Pomp, C. M. Hart and D. M. de Leeuw, “Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators,” Science, Vol. 270, No. 5238, 1995, pp. 972-974. http://dx.doi.org/10.1126/science.270.5238.972
- Y. Y. Lin, D. J. Gundlach, S. F. Nelson and T. N. Jackson, “Pentacene-Based Organic Thin-Film Transistors,” IEEE Transactions on Electrical Development, Vol. 44, No. 8, 1997, pp. 1325-1331. http://dx.doi.org/10.1109/16.605476
- D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson and D. G. Schlom, “Pentacene Organic Thin-Film Transistors-Molecular Ordering and Mobility,” IEEE Electron Device Letters, Vol. 18, No. 3, 1997, pp. 87-89. http://dx.doi.org/10.1109/55.556089
- C. D. Dimitrakopoulos, A. R. Brown and A. Pomp, “Molecular Beam Deposited Thin Films of Pentacene for Organic Field Effect Transistor Applications,” Journal of Applied Physics, Vol. 80, No. 4, 1996, pp. 2501-2511. http://dx.doi.org/10.1063/1.363032
- I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth and T. M. Klapwijk, “Morphology Identification of the Thin Film Phases of Vacuum Evaporated Pentacene on SIO Substrates,” Synthetic Metals, Vol. 104, No. 3, 1999, pp. 175-178.
- M. Zhu and K. Varahramyan, “Performance Improvement of Organic Thin Film Transistors by SiO2/Pentacene Interface Modification Using an Electrostatically Assembled PDDA Monolayer,” Solid-State Electron, Vol. 50, No. 2, 2006, pp. 129-133. http://dx.doi.org/10.1016/j.sse.2005.10.040
- T. Yokoyama, C. B. Park, K. Nagashio, K. Kita and A. Toriumi, “Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2 Ambient,” Applied Physics Express, Vol. 1, No. 4, 2008, pp. 041801-041803. http://dx.doi.org/10.1143/APEX.1.041801
- Gordon Group/GAMESS. http://www.msg.ameslab.gov/gamess/
- R. B. Campbell, J. M. Robertson and J. Trotter, “The Crystal Structure of Hexacene, and a Revision of the Crystallographic Data for Tetracene and Pentacene,” Acta Crys- tallographica, Vol. 15, No. 3, 1962, pp. 289-290. http://dx.doi.org/10.1107/S0365110X62000699