Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules
- 1 MPT, Inc., Fullerton, CA, USA
- 2 MPT, Inc., Fullerton, CA, USA
- 3 Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA
Abstract
A method for balancing thermal and electrical packaging requirements for gallium nitride (GaN) high power amplifier (HPA) modules is presented. The goal is to find a design approach that minimizes the junction temperature of the GaN so that it is reliable and has interconnects that meet electrical performance requirements. One benefit of GaN is that it can simultaneously achieve high power density and operate at microwave and millimeter-wave frequencies. However, the power density can be so high that the necessary thermal solutions can have negative impact on electrical performance. This is especially a concern for the electrical interconnects required for the input/ output ports on high power amplifier devices. This is because the signal interconnects must operate at GHz frequencies, which means that special care must be taken to avoid problems such as undesired signal coupling and ground path inductance. Therefore, this work focuses on GaN packaging and its integration into a module. The results show that an optimum thickness for the GaN heat spreader exits for thermal performance but the electrical design is impacted negatively if the optimum thermal design is chosen. Therefore, a balanced design is chosen which meets overall system level requirements.
- Sturdivant, R. (2013) Microwave and Millimeter-Wave Electronic Packaging. Artech House, Norwood, 148.
- Pribble, W.L., et al. (2002) Applications of SiC MESFETs and GaN HEMTs in Power Amplifier Design. IEEE MTT-S International Microwave Symposium Digest, 2-7 June 2002.
- Yu, X.M., Tao, H.Q. and Hong, W. (2016) A Ka Band 15 W Power Amplifier MMIC Based on GaN HEMT Technology. IEEE International Workshop on Electromagnetics, 16-18 May 2016.
- Gunjan, A., Thomas, K., Thomas, K. and Dana, W. (2016) Modeling and Analysis of Thermal Management in GaN HEMTs Using Microfluidic Cooling. Journal of Electronic Packaging, 139, 011001. https://doi.org/10.1115/1.4035064
- Noh, S.Y. and Bok, Y.I. (2016) A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications. IEEE Microwave and Wireless Components Letters, 26, 619-621. https://doi.org/10.1109/LMWC.2016.2585553
- Cen, Y.F. and McCann, D. (2012) 100 W GaN PA in Low Cost 3 × 6 mm Plastic DFN Package Providing the Smallest “True SMT” Footprint for Pulse RADAR Applications. 7th European Microwave Integrated Circuits Conference, Amsterdam, October 2012, 333-336.
- Pavlidis, S., Ulusoy, A.C. and Papapolymerou, J. (2015) A 5.4 W X-Band Gallium Nitride (GaN) Power Amplifier in an Encapsulated Organic Package. 45th European Microwave Conference, Paris, September 2015, 789-792.
- Flucke, J., Schmuckle, F.J., Heinrich, W. and Rudolph, M. (2009) An Accurate Package Model for 60 W GaN Power Transistors. 4th European Microwave Integrated Circuits Conference, Rome, September 2009, 152-155.
- Halder, S., Kharabi, F., Howle, T., McMacken, J., Burns, C., LeFevre, M., Runton, D. and Gering, J. (2012) Broadband Lumped Package Modeling for Scaling Multi-Cell GaN HEMT Power Devices. 79th Microwave Measurement Conference (ARFTG), Montreal, June 2012, 1-3. https://doi.org/10.1109/ARFTG79.2012.6291193
- Cheron, J., Campovecchio, M., Barataud, D., Reveyrand, T., Floriot, D., Stanislawiak, M., Eudeline, P. and Demenitroux, W. (2011) Harmonic Control in Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band. European Microwave Conference, Manchester, October 2011, 1111-1114.
- Cripps, S.C. (2006) RF Power Amplifiers for Wireless Communications. 2nd Edition, Artech House, Norwood.