Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi<sub>2</sub>Te<sub>3</sub>) and Antimony Telluride (Sb<sub>2</sub>Te<sub>3</sub>) Thermoelectric Devices — Oak Academic Publishing
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Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi<sub>2</sub>Te<sub>3</sub>) and Antimony Telluride (Sb<sub>2</sub>Te<sub>3</sub>) Thermoelectric Devices
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL, USA
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Department of Electrical Engineering, Northern Illinois University, DeKalb, IL, USA
1 Department of Electrical Engineering, Northern Illinois University, DeKalb, IL, USA
2 Department of Electrical Engineering, Northern Illinois University, DeKalb, IL, USA
We report on the fabrication and characterization of multi-leg bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) thermoelectric devices. The two materials were deposited, on top of SiO 2 /Si substrates, using Pulsed Laser Deposition (PLD). The SiO 2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi 2 Te 3 and Sb 2 Te 3 were deposited at substrate temperatures of 100 ° C, 200 ° C, 300 ° C and 400 ° C. The results show that the device has a voltage sensitivity of up to 146 μ V/K and temperature sensitivity of 6.8 K/mV.
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