AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature — Oak Academic Publishing
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AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature
Ecole Polytechnique de Thiès, Thiès, Sénégal
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Institute of Technology, University of Thiès, Thiès, Sénégal
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Institute of Technology, University of Thiès, Thiès, Sénégal
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Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
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Ecole Polytechnique de Thiès, Thiès, Sénégal
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Ecole Polytechnique de Thiès, Thiès, Sénégal
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Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
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Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
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Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
1 Ecole Polytechnique de Thiès, Thiès, Sénégal
2 Institute of Technology, University of Thiès, Thiès, Sénégal
3 Institute of Technology, University of Thiès, Thiès, Sénégal
4 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
5 Ecole Polytechnique de Thiès, Thiès, Sénégal
6 Ecole Polytechnique de Thiès, Thiès, Sénégal
7 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
8 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
9 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Excess minority carrier’s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb , respectively at the junction (n ＋ /p) and back surface (p ＋ /p), the AC expression of the excess minority carriers’ density δ ( T , ω ) is determined. The AC density of photocurrent J ph ( T , ω ) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters ( D ( ω )) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.
KeywordsSilicon Solar CellAC Back Surface Recombination VelocityTemperatureBode and Nyquist Diagrams
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