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A Novel Frequency Selective Surface with Improved Miniaturization Performance
Department of Microwave Engineering, Harbin Institute of Technology, Harbin, China
Department of Electrical Engineering, The Fu Foundation School of Engineering and Applied Science, Columbia University, New York, USA.
Department of Microwave Engineering, Harbin Institute of Technology, Harbin, China
Department of Microwave Engineering, Harbin Institute of Technology, Harbin, China
- 1 Department of Microwave Engineering, Harbin Institute of Technology, Harbin, China
- 2 Department of Electrical Engineering, The Fu Foundation School of Engineering and Applied Science, Columbia University, New York, USA.
- 3 Department of Microwave Engineering, Harbin Institute of Technology, Harbin, China
- 4 Department of Microwave Engineering, Harbin Institute of Technology, Harbin, China
Journal of Electromagnetic Analysis and Applications·Volume 04 (2012)·Pages 108–111·Published 28 March 2012·DOI10.4236/jemaa.2012.43014
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Abstract
Based on previous work, a novel Frequency Selective Surface (FSS) consisting of two metallic layers is proposed. The first layer is inductive-designed to generate the band-pass performance, while the second layer is capacitive-designed so that the miniaturization characteristic can be further improved. As a result, compared with the traditional single-layer structure, the profile of the FSS proposed is relatively small with the cell’s dimension only 0.0814λ × 0.0814λ. Moreover, the structure’s stability corresponding to waves of different polarizations and incident angles are also testified, which ensures the practicability of the proposed structure.
Keywordsrequency Selective Surface (FSS)MiniaturizationStability
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