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Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV
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Journal of Electromagnetic Analysis and Applications·Volume 02 (2010)·Pages 357–361·Published 30 June 2010·DOI10.4236/jemaa.2010.26046
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Abstract
The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on an classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.
KeywordsGaAsHeterostructureOptical PropertiesThin FilmsSpectroscopic Ellipsometry
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