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EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
- 1 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
- 2 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
- 3 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
- 4 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Journal of Electromagnetic Analysis and Applications·Volume 07 (2015)·Pages 302–307·Published 3 December 2015·DOI10.4236/jemaa.2015.712032
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Abstract
It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.
Keywordsphotocurrent lasing and recombination currentshot electronsthe microwave fieldlightp-n-junction
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