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New 3D Aware Formulation of MoM-GEC Method for Studying Planar Structures with Vertical Sources
Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
- 1 Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
- 2 Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
- 3 Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
- 4 Communication System Laboratory Sys’Com, National Engineering School of Tunis, University Tunis El Manar, Tunis, Tunisia
Journal of Electromagnetic Analysis and Applications·Volume 08 (2016)·Pages 79–94·Published 22 April 2016·DOI10.4236/jemaa.2016.84009
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Abstract
This paper proposes a generalization of the MoM-GEC method [1] needed for studying planar structures excited with a source located at perpendicular plan relative to circuit plan. A general formulation is detailed to allow modeling excitation of a planar structure with one or more sources located in plans other than the circuit plan. The numerical approach elaborated is based on the definition of new admittance operators and rotational transformations describing the transition from one plan to another. To validate this approach, we consider the case of a single source located in the perpendicular plan to the circuit.
KeywordsAdmittance OperatorMoM-GEC 3DDiscontinuitiesVertical Source
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