In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient ( kl ) and irradiation energy ( ø p ) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc 0 and Jsc 1 corresponding to the recombination velocity Sb 0 and Sb 1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.
KeywordsSilicon Solar CellIrradiationRecombination VelocityBase Thickness
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