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Structural and microstructural characteristics of B-doped PbTe semiconductor
Institute for Technology of Nuclear and Other Raw Mineral Materials, Applied Mineralogy Unit, Franche d‘Eperey 86, P.O. Box 390, 11000 Belgrade, Serbia
- 1 Institute for Technology of Nuclear and Other Raw Mineral Materials, Applied Mineralogy Unit, Franche d‘Eperey 86, P.O. Box 390, 11000 Belgrade, Serbia
Journal of Minerals and Materials Characterization and Engineering·Volume 05 (2006)·Pages 143–153·Published 20 October 2006·DOI10.4236/jmmce.2006.52010
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Abstract
The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.
KeywordsB-doped PbTe semiconductorthe Rietveld methodmicrostructural measurements.
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