Electrical Properties of Nano-TiO<sub>2</sub> Thin Film Using Spin Coating Method
- 1 Department of Materials Science and Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria
- 2 Department of Materials Science and Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria
- 3 Centre for Energy and Research Development, Obafemi Awolowo University, Ile-Ife, Nigeria
- 4 Department of Metallurgical and Materials Engineering, Federal University of Technology, Akure, Nigeria
- 5 Department of Mechanical and Manufacturing Engineering, University of Manitoba, Winnipeg, Canada
- 6 Engineering Materials Development Institute, Akure, Nigeria
Abstract
This work investigated the electrical properties of TiO 2 thin film on empty glass and ITO glass by spin coating method. Highly transparent titanium oxide thin films were prepared on empty glass and Indium Tin Oxide (ITO) from a titanium (III) chloride precursor. The sheet resistance of the film prepared from both the synthesised and the commercially available TiO2 was measured by the Keithley four-point probe tester (KFPPT). A comparable sheet resistance of 10.69E + 00 Ω/sq was obtained on the ITO. The electrical conductivity of the TiO 2 film on ITO glass substrate was found to be very high (3.46E + 05 Ω -1 ?cm -1 ) and comparable to that of the bare ITO glass.
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