Research ArticleOpen AccessGoogle Scholar indexed
In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
A.I. Alikhanyan National Science Laboratory (YerPhI)
Institute of Metrology Republic of Armenia
Institute of Metrology Republic of Armenia
State Nuclear Safety Regulatory Committee by the Government of Armenia
- 1 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 2 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 3 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 4 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 5 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 6 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 7 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 8 A.I. Alikhanyan National Science Laboratory (YerPhI)
- 9 Institute of Metrology Republic of Armenia
- 10 Institute of Metrology Republic of Armenia
- 11 State Nuclear Safety Regulatory Committee by the Government of Armenia
Journal of Modern Physics·Volume 03 (2012)·Pages 383–387·Published 23 May 2012·DOI10.4236/jmp.2012.35053
Copy link · social · email
Abstract
The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.
KeywordsSiliconRadiation Defects (RD)Carrier ConcentrationCarrier MobilityConductivity
- B. N. Mukashev, Kh. A. Abdullin and Yu. V. Gorelkinski, “Metastable and Bistable Defects Isilicon,” Uspekhi Fizicheskikh Nauk, Vol. 170, No. 2, 2000, pp. 143-154 (in Russian). doi:10.3367/UFNr.0170.200002b.0143
- C. Leroy and P.-G. Rancoita, “Particle Interaction and Displacement Damage in Silicon Devices Operated in Radiation Environments,” Reports on Progress in Physics, Vol. 70, No. 4, 2007, pp. 493-625. doi:10.1088/0034-4885/70/4/R01
- Sh. Makhkamov, N. A. Tursunov, M. Ashurov, R. P. Saidov and Z. M. Khakimov, “Formation of Radiation Defects in Silicon Structures under Low-Intensity Electron Irradiation,” Semiconductor Science and Technology, Vol. 16, No. 7, 2001, pp. 543-547. doi:10.1088/0268-1242/16/7/303
- L. I. Murin, V. P. Markevich, I. F. Medvedeva and L. Dobaczewski, “Bistability and Electrical Activity of the Vacancy-Dioxygen Defect in Silicon,” Fizika i Tekhnika Poluprovodnikov, Vol. 40, No. 11, 2006, pp. 1316-1320 (in Russian).
- T. A. Pagava, “A Study of Recombination Centers in an Irradiated p-Si,” Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 6, 2004, pp. 665-669 (in Russian).
- V. S. Vavilov, “Atomic Migration and Defect Concentration and Structure Changes Due to Electronic Subsystem Excitations in a Semiconductor,” Uspekhi Fizicheskikh Nauk, Vol. 167, No. 4, 1997, pp. 407-412 (in Russian). doi:10.3367/UFNr.0167.199704c.0407
- N. Yarykin and J. Weber, “Interaction of Copper Impurity with Radiation Defects in Boron-Doped Silicon,” Fizika i Tekhnika Poluprovodnikov, Vol. 44, No. 8, 2010, pp. 1017-1020 (in Russian).
- V. B. Molodkin, S. I. Olikhovskii, E. G. Len1, B. V. Sheludchenko1, et al., “X-Ray Diffraction Characterization of Microdefects in Silicon Crystals after High-En- ergy Electron Irradiation,” Physica Status Solidi (A), Vol. 208, No. 11, 2011, pp. 2552-2557. doi:10.1002/pssa.201184253
- V. S. Vavilov, “Origine and Energetic Specter of Radiation Damages in Semiconductors,” Uspekhi Fizicheskikh Nauk, Vol. 54, No. 3, 1964, pp. 431-450 (in Russian).
- V. V. Emtsev, A. M. Ivanov, V. V. Kozlovski, A. A. Lebedev, G. A. Oganesyan, N. B. Strokan and G. Wagner, “Similarities and Distinctions of Defect Production by Fast Electron and Proton Irradiation: Moderately Doped Silicon and Silicon Carbide of n-Type,” Fizika i Tekhnika Poluprovodnikov, Vol. 46, No. 4, 2012, pp. 473-481 (in Russian).
- T. A. Pagava, “Annealing Peculiarities for Radiation- Induced Defects in p-Si Crystals,” Fizika i Tekhnika Poluprovodnikov, Vol. 41, No. 6, 2007, pp. 651-653 (in Russian).