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Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si<sub>1-y</sub>Niy:H at Very Low Temperature with Magnetic Field
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences et Techniques de Mohammadia, Mohammedia, Morocco
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
Laboratoire de Spectroscopie Hertzienne LSH, Université de LilleI, Villeneuve d’Ascq Cedex, France
- 1 Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
- 2 Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
- 3 Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences et Techniques de Mohammadia, Mohammedia, Morocco
- 4 Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
- 5 Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
- 6 Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
- 7 Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco
- 8 Laboratoire de Spectroscopie Hertzienne LSH, Université de LilleI, Villeneuve d’Ascq Cedex, France
Journal of Modern Physics·Volume 03 (2012)·Pages 447–450·Published 21 June 2012·DOI10.4236/jmp.2012.36061
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Abstract
We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si 1-y Ni y :H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2 . This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.
KeywordsAmorphous Silicon-Nickel Alloys a-Si<sub>1-y</sub>Ni<sub>y</sub>:HVariable Range Hopping ConductivityMetal Insulator TransitionPositive Magnetoresistance
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