Research ArticleOpen AccessGoogle Scholar indexed
Excitation Transfer in Vertically Stacked in (Ga)As/GaAs Quantum Rings
Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, Université Carthage, Tunis, Tunisia
Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, Université Carthage, Tunis, Tunisia
Instituto de Ciencia de los Materials, Universidad de Valencia, Valencia, Spain
Instituto de Ciencia de los Materials, Universidad de Valencia, Valencia, Spain
Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, Université Carthage, Tunis, Tunisia
Instituto de Microelectrónica de Madrid, Madrid, Spain
Instituto de Microelectrónica de Madrid, Madrid, Spain
- 1 Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, Université Carthage, Tunis, Tunisia
- 2 Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, Université Carthage, Tunis, Tunisia
- 3 Instituto de Ciencia de los Materials, Universidad de Valencia, Valencia, Spain
- 4 Instituto de Ciencia de los Materials, Universidad de Valencia, Valencia, Spain
- 5 Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, Université Carthage, Tunis, Tunisia
- 6 Instituto de Microelectrónica de Madrid, Madrid, Spain
- 7 Instituto de Microelectrónica de Madrid, Madrid, Spain
Journal of Modern Physics·Volume 03 (2012)·Pages 471–475·Published 21 June 2012·DOI10.4236/jmp.2012.36063
Copy link · social · email
Abstract
Carrier tunnelling through GaAs barriers of different thicknesses is investigated in vertically InGaAs/GaAs quantum rings (QR’s). Shorter PL decay time of the ground state emission of high-energy component in the sample with thicker spacer (1.5 nm) is ascribed to both tunnelling effect between the two QR families and vertical coupling between layers in the stacks. We found that tunnelling time between QR’s followed the Wentzel-Kramers-Brillouin (WKB) approximation. The non resonant tunnelling rate between QR’s is found to be different by one order of magnitude from the rate in quantum dots (QD’s).
KeywordsQuantum RingsVertical StackTime Resolved Photoluminescence
- S. Luryi, “Possibility of a Direct Observation of the Time Evolution in Heterostructure Barrier Tunnelling,” Solid State Communications, Vol. 65, No. 8, 1988, pp. 787-789. doi:10.1016/0038-1098(88)90505-4
- A. Takeuchi, T. Kuroda, K. Mase, Y. Nakata and N. Yokoyama, “Dynamics of Carrier Tunneling between Vertically Aligned Double Quantum Dots,” Physical Review B, Vol. 62, No. 3, 2000, pp. 1568-1571. doi:10.1103/PhysRevB.62.1568
- R. Heitz, I. Mukhametzov, P. Chen and A. Madhukar, “Quantitative Study of C-H Bonding in Polymerlike Amorphous Carbon Films Using in Situ Infrared Ellipsometry,” Physical Review B, Vol. 58, No. 20, 1998, pp. 13957- 13973. doi:10.1103/PhysRevB.58.13957
- M. Tsuchiya, T. Matsusue and H. SaKaki, “Tunneling Escape Rate of Electrons from Quantum Well in Double- Barrier Heterostructures,” Physical Review Letters, Vol. 59, No. 20, 1987, pp. 2356-2359. doi:10.1103/PhysRevLett.59.2356
- B. Deveaud, et al., “Tunnelling and Relaxation in Coupled Quantum Wells,” Europhysics Letters, Vol. 11, No. 4, 1990, p. 367. doi:10.1209/0295-5075/11/4/013
- S. Moto, T. Inata, A. Takeuchi, Y. Sugiyama and T. Fujii, “Longitudinal-Optical-Phonon Assisted Tunneling in Tunneling bi-Quantum Well Structures,” Applied Physics Letters, Vol. 58, No. 21, 1991, p. 2393. doi:10.1063/1.104881
- P. M. Smowton, E. Hermann, Y. Ning, H. D. Summers and P. Blood, “Optical Mode Loss and Gain of Multiple- Layer Quantum-Dot Lasers,” Applied Physics Letters, Vol. 78, No. 18, 2001, p. 2629. doi:10.1063/1.1366652
- M. L. Dotor, Recio, D. Golmayo and F. Briones, “Photoluminescence Caracterisation of GaAs Quantum Well La- ser Structure with AlAs/GaAs Superlatices Waveguide,” Journal of Applied Physics, Vol. 72, No. 12, 1992, pp. 5861-5866.
- F. Suarez, D. Gradanos, M. L. Dotor and J. M. Garcia, “Laser Devices with Stacked Layers of InGaAs/GaAs Quantum Rings,” Nanothechnology, Vol. 15, No. 4, 2004, pp. 126-130.
- P. Miska, J. Even, C. Paranthoen, O. Dehaese, A. Jbeli, M. Senes and X. Marie, “Vertical Electronic Coupling between InAs/InP Quantum-Dot Layers Emitting in the Near-Infrared Range,” Applied Physics Letters, Vol. 86, No. 11, 2005, pp. 111905-111907. doi:10.1063/1.1865332
- W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados and J. M. Garcia, “Lateral Carrier Tunnelling in Stacked In(Ga)As/GaAs Quantum Rings,” The European Physical Journal B, Vol. 54, No. 2, 2006, pp. 217-223. doi:10.1140/epjb/e2006-00444-x