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Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences et Techniques de Mohammadia, Département de Physique, Mohammedia, Morocco
Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Laboratoire de Spectroscopie Hertzienne LSH, Batiment P5, Université des Sciences et Technologies de LilleI 59 655 Villeneuve d’Ascq Cedex France
- 1 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 2 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 3 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 4 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 5 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 6 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 7 Laboratoire de Physique de la Matière Condensée, Faculté des Sciences et Techniques de Mohammadia, Département de Physique, Mohammedia, Morocco
- 8 Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
- 9 Laboratoire de Spectroscopie Hertzienne LSH, Batiment P5, Université des Sciences et Technologies de LilleI 59 655 Villeneuve d’Ascq Cedex France
Journal of Modern Physics·Volume 03 (2012)·Pages 517–520·Published 17 July 2012·DOI10.4236/jmp.2012.37070
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Abstract
On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si 1-y Ni y :H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2 . This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature T C , we obtained the Mott Variable Range Hopping regime with T -1/4 , indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature T C decreases with nickel content in the alloys.
KeywordsAmorphous Silicon-Nickel Alloys a-Si<sub>1-y</sub>Ni<sub>y</sub>:HVariable Range Hopping ConductivityTransport PhenomenonMetal Insulator Transition
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