Research ArticleOpen AccessGoogle Scholar indexed

Nanocapacitor with a Cantor Multi-Layered Structure

¹ Departamento de Electrónica, Sistemas e Informática, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585 C.P. 45604, Tlaquepaque, Jal., MEXICO
² Departamento de Electrónica, Sistemas e Informática, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585 C.P. 45604, Tlaquepaque, Jal., MEXICO
³ Departamento de Electrónica, Sistemas e Informática, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585 C.P. 45604, Tlaquepaque, Jal., MEXICO
⁴ Departamento de Matemáticas y Física, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585 C.P. 45604, Tlaquepaque, Jal., MEXICO

Journal of Modern Physics·Volume 03 (2012)·Pages 1013–1017·Published 24 September 2012·DOI10.4236/jmp.2012.39132

Abstract

We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.

KeywordsNanocapacitorCantor StructureSchrodinger-Poisson Equation

D. Goldhaber-Gordon, M. S. Montemerlo, J. C. Love, G. J. Optiteck and J. Ellenbogen, “Overview of Nanoelectronic Devices,” Proceedings of the IEEE, Vol. 85, No. 4, 1997, pp. 521-540. doi:10.1109/5.573739
B. B. Mandelbrot, “The Fractal Geometry of Nature,” Freeman, New York, 1983.
J. A. Monsoriu, F. R. Villatoro, M. J. Marin, J. Pe′rez and L. Monreal, “Quantum Fractal Superlattices,” American Journal of Physics, Vol. 74, No. 9, 2006, pp. 831-836. doi:10.1119/1.2209242
J. Sune, P. Olivo and B. Ricco, “Self-Consistent Solution of Poison and Schrdinger Equations in Accumulated Semi-Conductor-Insulator Interfaces,” Journal of Applied Physics, Vol. 70, No. 1, 1991, p. 337. doi:10.1063/1.350278
S. L. Lo, D. Buchanan, Y. Taur and W. Wang, “Quantum Mechanical Modeling of Electron Tunneling Current from the Inversion Layer of Ultra-Thin Oxide nMOSFETs,” IEEE on Electron Device Letters, Vol. 18, No. 5, 1997, pp. 209-211. doi:10.1109/55.568766
A. Ghetti, “Characterization and Modeling of the Tunneling Current in Si-SiO2-Si Structures with Ultra-Thin Oxide Layer,” Microelectronic Engineering, Vol. 59, No. 1-4, 2001, pp. 127-136. doi:10.1016/S0167-9317(01)00656-6
R. Castagne and A. Vapaille, “Description of the SiO2-Si Interface Properties by Means of very Low Frequency MOS Capacitance Measurements,” Surface Science, Vol. 28, No. 1, 1971, pp. 157-193, doi:10.1016/0039-6028(71)90092-6
S. H. Lo, D. A. Buchanan and Y. Taur, “Modeling and Characterization of Quantization, Polysilicon Depletion, and Direct Tunneling Effects in MOSFETs with Ultrathin Oxides,” IBM Journal of Research and Development, Vol. 43, No. 3, 1999, pp. 327-337. doi:10.1147/rd.433.0327
A. Ghetti, J. Bude, P. Silverman, A. Hamad and H. Vaidya, “Modeling and Simulation of Tunneling Current in MOS Devices including Quantum Mechanical Effects,” IEICE Transactions on Electronics, Vol. E83-C, No. 8, 2000, pp. 1175-1182.
P. Harrison, “Quantum Wells, Wires and Dots,” 2nd Edition, Wiley, Hoboken, 2008.
S. Datta, “Quantum Transport: Atom to Transistor,” Cambridge University Press, Cambridge, 2005. doi:10.1017/CBO9781139164313
D. K. Ferry and S. M. Goodnick, “Transport in Nanostructures,” Cambridge University Press, Cambridge, 2001.
M. Y. Dogish and F. D. Ho, “A Comprehensive Analytical Model for Metal-Insulator Semiconductor (MIS) Devices,” IEEE Transactions on Electron Devices, Vol. 39, No. 12, 1992, pp. 2771-2780. doi:10.1109/16.168723

Menu

Menu

Menu

Nanocapacitor with a Cantor Multi-Layered Structure

Abstract

References (15)