The Conductivity of Indium Phosphide Irradiated by Fast Electrons

Abstract

In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n -InP are irradiated by electrons energy of 6 MeV and doses of 10 17 el/cm 2 (centimeter) and 2 × 10 17 el/cm 2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n -InP ) also form the complex defects of the type of di sordered areas , annealing of which proceed s at T > 300°C that binds accumu lating radiation defects.