Negative Resistance Region 10 nm Gate Length on FINFET

¹ Sama Technical and Vocational College, Islamic Azad University, Kazeroon Branch, Kazeroon, Iran

² Department of Engineering, Islamic Azad University, Bushehr, Iran

³ Islamic Azad University, Science and Research Branch, Bushehr, Iran

Abstract

In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.

KeywordsMulti-Gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)FINFETSilicon on InsulatorNegative Resistance

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Negative Resistance Region 10 nm Gate Length on FINFET

Abstract

References (8)