Field Electron-Emission from a-CN_x:H Films Formed on Al Films Using Supermagnetron Plasma CVD

Abstract

Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO 2 ) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N 2 /i-C 4 H 10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N 2 gas concentration was controlled at 70%. The optical band gap of a-CN x :H films was about 0.75 eV. The a-CN x :H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (E TH ) of 10, 13 and 12 V/μm, respectively. The a-CN x :H film deposited on low-cost Al film (Al/glass) showed a sufficiently low E TH of 12 V/μm, eliminating the need for high-cost p-Si substrates.