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The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO<sub>2</sub> Structures
A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia
A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia
A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia
Yerevan State University, Yerevan, Armenia
National Institute of Metrology, Yerevan, Armenia
- 1 A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia
- 2 A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia
- 3 A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia
- 4 Yerevan State University, Yerevan, Armenia
- 5 National Institute of Metrology, Yerevan, Armenia
Journal of Modern Physics·Volume 06 (2015)·Pages 1657–1662·Published 10 September 2015·DOI10.4236/jmp.2015.611167
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Abstract
The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.
KeywordsMetal-Insulator-Semiconductor (MIS) StructuresRadiation EffectsSurface States (SS) DensityInsulator-Semiconductor (I-S) InterfaceAnnealing
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