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The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor
Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan
Physico-Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan
Namangan State University, Namangan, Uzbekistan
- 1 Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan
- 2 Physico-Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
- 3 Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan
- 4 Namangan State University, Namangan, Uzbekistan
Journal of Modern Physics·Volume 06 (2015)·Pages 1921–1926·Published 15 October 2015·DOI10.4236/jmp.2015.613197
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Abstract
Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10 -3 s and capture cross sections of 10 -16 sm 2 . For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.
KeywordsPhase PortraitsThe Generation of Charge CarriersThe Recombination of Charge Carriers
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