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The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
National Institute of Metrology, Yerevan, Armenia
National Institute of Metrology, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 1 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 2 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 3 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 4 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 5 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 6 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 7 National Institute of Metrology, Yerevan, Armenia
- 8 National Institute of Metrology, Yerevan, Armenia
- 9 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 10 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 11 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 12 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 13 CANDLE Synchrotron Research Institute, Yerevan, Armenia
Journal of Modern Physics·Volume 06 (2015)·Pages 2050–2057·Published 5 November 2015·DOI10.4236/jmp.2015.614211
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Abstract
Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiO n (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.
KeywordsImpurity OxygenSilicon CrystalElectron IrradiationInfrared (IR) Absorption SpectraAnnealingVacancyInterstitial Atom
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