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The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
National Institute of metrology, Yerevan, Armenia
National Institute of metrology, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 1 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 2 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 3 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 4 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 5 A.I. Alikhanyan National Science Laboratory (Yerevan Physics Institute), Yerevan, Armenia
- 6 National Institute of metrology, Yerevan, Armenia
- 7 National Institute of metrology, Yerevan, Armenia
- 8 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 9 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 10 CANDLE Synchrotron Research Institute, Yerevan, Armenia
- 11 CANDLE Synchrotron Research Institute, Yerevan, Armenia
Journal of Modern Physics·Volume 07 (2016)·Pages 1413–1419·Published 2 August 2016·DOI10.4236/jmp.2016.712128
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Abstract
The studies of the influence of pico-second (4 × 10 -13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.
KeywordsSilicon CrystalElectron IrradiationPico-Second Pulse BeamConductivityCarriers’ Mobility
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