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Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films
Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan
Physico-technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
Namangan State University, Namangan, Uzbekistan
- 1 Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan
- 2 Physico-technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
- 3 Namangan State University, Namangan, Uzbekistan
Journal of Modern Physics·Volume 07 (2016)·Pages 1661–1667·Published 6 September 2016·DOI10.4236/jmp.2016.713151
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Abstract
Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.
KeywordsRecombination CentersPhase PortraitGeneration of Charge CarriersRecombination of Charge CarriersForbidden ZoneAbsorption Coefficient
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