The spin dependent electron transmission phenomenon in a diluted resonant semiconductor heterostructure is employed theoretically to investigate the output transmission current polarization at zero magnetic field. Transparency of electron transmission is calculated as a function of electron energy and the well width, within the one electron band approximation along with the spin orbit interaction. Enhanced spin-polarized resonant tunneling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level is observed. We predict that a spin-polarized current spontaneously emerges in this heterostructure and we estimate theoretically that the polarization can reach 40%. This effect could be employed in the fabrication of spin filters, spin injectors and detectors based on non-magnetic semiconductors.
Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno and D. D. Awschalom, “Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure,” Nature, Vol. 402, 1999, pp.790-792. doi:10.1038/45509
J. A. Nesteroff, Y. V. Pershin and V. Privman, “Polarization of Nuclear Spins from the Conductance of Quantum wire,” Physical Review B, Vol. 69, 2004, pp. 121306(R).
P. St?eda and P ?eba, “Antisymmetric Spin Filtering in One-Dimensional Electron Systems with Uniform Spin-Orbit Coupling,” Physical Review Letters, Vol. 90, No. 25, 2003, p. 256601. doi:10.1103/PhysRevLett.90.256601
Y. V. Pershin and C.Piermarocchi, “Relaxation of Conduction Electron Spins in Semiconductors,” Applied Physics Letters, Vol. 86, No. 21, 2005, pp. 212107-1-3. doi:10.1063/1.1935747
G. A. Prinz, “Spin-Polarized Transport,” Physics Today, Vol. 48, No. 4, 1995, p. 58.
G. A. Prinz, “Magnetoelectronics,” Science, Vol. 282, 1998, pp. 1660-1663. doi:10.1126/science.282.5394.1660
D. Loss. D and D. P. DiVincenzo, “Quantum Computation with Quantum Dots,” Physical Review A, Vol. 57, No. 20, 1998, pp. 120-123.
B. E. Kane, “A silicon-based nuclear spin quantum computer,” Nature, Vol. 393, 1998, pp. 133-137. doi:10.1038/30156
S. Das Sarma, “Spintronics,” American Science, Vol. 89, 2001, pp. 516.
D. D. Awschalom, M. E. Flatte and N. Samarth, “Spintronics,” Scientific American, Vol. 286, 2002, pp. 66-73. doi:10.1038/scientificamerican0602-66
H. Akinaga and H. Ohno, “Semiconductor Spintronics,” IEEE Transactions on Nanotechnology, Vol. 1, No. 1, 2002, pp. 19-31. doi:10.1109/TNANO.2002.1005423
J. C. Egues, “Spin-Dependent Perpendicular Magnetotransport through a Tunable ZnSe/Zn1-xMnxSe Heterostructure,” Physical Review Letters, Vol. 80, No. 20, 1998, pp. 4578-4581. doi:10.1103/PhysRevLett.80.4578
E. Souto, O. A. C. Nunes, F. M. S. Lima, D. A. Agrello and A. L. A. Fonseca, “Spin Waves Amplification in Antiferromagnetic Semiconductors Stimulated by Infrared Laser Field,” Physical Review B, Vol. 68, No. 12, 2003, p. 125317. doi:10.1103/PhysRevB.68.125317
A. Voskoboynikov, S. S. Liu, C. P. Lee and O. Tretyak, “Spin-Dependent Tunneling in Double-Barrier Semiconductor Heterostructures,” Physical Review B, Vol. 59, No. 19, 1999, pp. 12514-12520.
A. de Andrada e Silva and G. C. La Rocca, “Electron-Spin Polarization by Resonant Tunneling,” Physical Review B, Vol. 59, No. 24, 1999, pp. 15583-15585. doi:10.1103/PhysRevB.59.R15583
V. I. Perel’, S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel’kov and W. Prettl, “Spin-Dependent Tunnelling through a Symmetric Barrier,” Physical Review B, Vol. 67, No. 20, 2003, p. 201304. doi:10.1103/PhysRevB.67.201304
A. J. Peter, “Electron-Spin Polarization on a Non-Magnetic Heterostructure,” Phyics Letters A, Vol. 372, No. 31, 2008, pp. 5239-5242. doi:10.1016/j.physleta.2008.06.025
Q.-F. Sun and X. C. Xie, “Bias-Controllable Intrinsic Spin Polarization in a Quantum Dot,” Physical Review B, Vol. 73, No. 23, 2006, p. 235301. doi:10.1103/PhysRevB.73.235301
Q.-F. Sun and X. C. Xie, “Spontaneous Spin-Polarized Current in a Nonuniform Rashba Interaction System,” Physical Review B, Vol. 71, No. 15, 2005, p. 155321. doi:10.1103/PhysRevB.71.155321
M. M. Glazov, P. S. Alekseev, M. S. Odnoblyudov, V. M. Chistyakov, S. A. Tarasenko and I. N. Yassievich, “Spin- dependent Resonant Tunneling in Symmetrical Double- Barrier Structure,” Physical Review B, Vol. 71, No. 15, 2005, p. 155313. doi:10.1103/PhysRevB.71.155313
V. I. Perel, S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel’kov and W. Prettl, “Spin-Dependent Tunneling through a Symmetric Semiconductor Barrier,” Physical Review B, Vol. 67, No. 20, 2003, p. R201304. doi:10.1103/PhysRevB.67.201304
G. Dresselhaus, “Spin-Orbit Coupling Effects in Zinic Blende Structures,” Physical Review, Vol. 100, No. 2, 2005, pp. 580-586. doi:10.1103/PhysRev.100.580
Yu. A. Bychkov and E. I. Rashba, “Oscillatory Effects and the Magnetic Susceptibility of Carriers in Inversion Layers,” Journal of Physics C, Vol. 17, No. 33, 1984, p. 6093.
A. K. Ghatak, “Basic Quantum Mechanics,” Macmillan Ind. Ltd, India, 2002, p. 242.
E. O. Kane, “Tunneling Phenomenon in Solids,” Plenum, New York, 1969.
A. Voskoboynikov, S. S. Liu, C. P. Lee and O. Tretyak., “Spin-Polarized Electronic Current in Resonant Tunneling Heterostructures,” Journal of Applied Physics, Vol. 87, No. 1, 2000, pp. 387-391. doi:10.1063/1.371872
J. C. Egues, “Spin-Dependent Perpendicular Magnetotransport through a Tunable ZnSe/Zn1-xMnxSe Heterostructure: A Possible Spin Filter?” Physical Review Letters, Vol. 80, No. 20, 1998, pp. 4578-4581. doi:10.1103/PhysRevLett.80.4578
K. C. Hall, W. H. Lau, K. Gündo?du, E. Michael Flatteé and T. F. Boggess, “Nonmagnetic Semiconductor Spin Transistor,” Applied Physics Letters, Vol. 83, No. 14, 2003, p. 2937.