Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination
- 1 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 2 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 3 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 4 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 5 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 6 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 7 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 8 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Abstract
The aim of this study is to determinate the electrical parameters of a white biased silicon solar cell submitted to an irradiation energy of particles (protons, helium, electrons and heavy ions). A theoretical study of the influence of irradiation energy on the photocurrent density, the photovoltage, the maximum power, as well as the maximum efficiency of the solar cell is presented through a resolution of the continuity equation relative to excess minority carrier. Then the expressions of the photocurrent density Jph, the photovoltage Vph, and the excess minority carrier recombination velocity at the back side Sb are established dependent of irradiation parameters ∅ p , Kl respectively irradiation flux and intensity. In this work, we propose a method for determining the recombination velocity of the excess minority carrier at the junction Sf max corresponding to the maximum power point delivered by the photovoltaic generator under the influence of the irradiation. It is then obtained by calculating the derivative of the power with respect to the excess minority carrier recombination velocity Sf at the junction emitter-base. A transcendental equation solution is deduced as eigenvalue, leading to the junction recombination velocity of excess minority carrier and also yields the solar cell maximum conversion efficiency.
- Martin, J.E. (2006) Physics for Radiation Protection: A Handbook. 2nd Edition, Wiley-VCH, Weinheim. https://doi.org/10.1002/9783527618798
- Fatemi, N.S., Sharps, P.R., Stan, M.A., Aiken, D.J., Clevenger, B. and Hou, H.Q. (2001) Radiation-Hard High-Efficiency Multi-Junction Solar Cells for Commercial Space Applications. Proceedings of the 17th European Photovoltaic Solar Energy Conference, 2155-2158.
- Kreinin, L., Bordin, N. and Eisenberg, N. (2007) Spectral Response of Light Biased Si Solar Cells at Open Circuit Voltage. Proceedings of the 14th Sede Boqer Symposium on Solar Electricity Production, 19-21 February 2007, 71-76.
- Ohshima, T., Sumita, T., Imaizumi, M., Kawakita, S., Shimazaki, K., Kuwajima, S., Ohi, A. and Itoh, H. (2005) Evaluation of the Electrical Characteristics of III-V Compounds Solar Cells Irradiated with Protons at Low Temperatures. Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Lake Buena Vista, FL, 3-7 January 2005, 806.
- Ould El Moujtaba, M.A., Ndiaye, M., Diao, A., Thiame, M., Barro, I.F. and Sissoko, G. (2012) Research Journal of Applied Sciences, Engineering and Technology, 4, 5068-5073.
- Gaye, I., Sam, R., Seré, A.D., Barro, I.F., Ould El Moujtaba, M.A., Mané, R. and Sissoko, G. (2012) International Journal of Emerging Trends & Technology in Computer Science (IJETTCS), 1, 210-214,
- Sow, O., Diarisso, D., Zénobe, N., MBodji, A., Diallo, M.S., Diao, A., Gaye, I., Barro, F.I. and Sissoko, G. (2013) International Journal of Innovative Technology and Exploring Engineering (IJITEE), 2, 330-334.
- Dione, B., Sow, O., Wade, M., Ibrahima, L.Y., Mbodji, S. and Sissoko, G. (2016) Circuits and Systems, 7, 3984-4000. https://doi.org/10.4236/cs.2016.711330
- Barro, F.I., Seidou Maiga, A., Wereme, A. and Sissoko, G. (2010) Physical and Chemical News, 56, 76-84.
- Diallo, M.M., Tamba, S., Seibou, B., Cheikh, M.L.O., Diatta, I., El Hadji Ndiaye, Traore, Y., Sarr, C.T. and Sissoko, G. (2017) Journal of Scientific and Engineering Research, 4, 29-40.
- Gaye, I., Ould El Moujtaba, M.A., Thiam, N., Tall, I. and Sissoko, G. (2014) Current Trends in Technology and Science, 3, 98-104.
- Dieye, M., Mbodji, S., Zoungrana, M., Zerbo, I., Dieng, B. and Sissoko, G. (2015) World Journal of Condensed Matter Physics, 5, 275-283. https://doi.org/10.4236/wjcmp.2015.54028
- Ly, I., Wade, M., Ly Diallo, H., El Moujtaba, M.A.O., Lemtabott, O.H., Mbodji, S., Diasse, O., Ndiaye, A., Gaye, I., Barro, F.I., Wereme, A. and Sissoko, G. (2011) Irradiation Effect on the Electrical Parameters of a Bifacial Silicon Solar Cell under Multispectral Illumination. Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, 785-788.