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Carrier-Induced Magnetic Solitons and Metal-Insulator Transition in Diluted Magnetic Semiconductors Ga<sub>1-x</sub>Mn<sub>x</sub>As
Department of Physics, Tokyo Gakugei University, Tokyo, Japan
Department of Physics, Tokyo Gakugei University, Tokyo, Japan
Institude of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai, Japan
- 1 Department of Physics, Tokyo Gakugei University, Tokyo, Japan
- 2 Department of Physics, Tokyo Gakugei University, Tokyo, Japan
- 3 Institude of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai, Japan
Journal of Modern Physics·Volume 09 (2018)·Pages 2437–2442·Published 4 December 2018·DOI10.4236/jmp.2018.914156
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Abstract
We discuss hole-induced magnetic solitons and metal-insulator transition of transport properties in diluted magnetic semiconductors Ga 1-x Mn x As from the standpoint of a field theoretical formulation, and analyze experimental data of transport properties, using the supersymmetry sigma formula and the effective Lagrangian of diffusion model.
KeywordsDiluted Magnetic SemiconductorMagnetic SolitonMetal-Insulator TransitionLocalization
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